1、To the result of analyze and the demand of process, the high reliable SRAM is presented.
根據(jù)分析結(jié)果和現(xiàn)有工藝要求，設(shè)計(jì)了高可靠的靜態(tài)存儲(chǔ)單元。

2、The access time of SRAM is 15ns by optimizing the system.
通過(guò)系統(tǒng)優(yōu)化,達(dá)到15ns的存取時(shí)間。

3、A practical design of a dual-port SRAM embedded in OLED display driver ICs was presented.
詳細(xì)描述了一種集成在OLED顯示驅(qū)動(dòng)芯片中的雙端口SRAM設(shè)計(jì)。

4、The Layout and Manufacture of Fully CMOS 4k SRAM HKE5114
全CMOS 4k靜態(tài)RAM的版圖設(shè)計(jì)與試制

5、SRAM BIST is also combined with ARM core's boundary scan testing during system level DFT.
系統(tǒng)級(jí)可測(cè)性設(shè)計(jì)主要是將存儲(chǔ)器BIST與ARM核的邊界掃描測(cè)試相結(jié)合。

6、Features and application of single-chip NV SRAM DS3070W
單片非易失性存儲(chǔ)器DS3070W的性能特點(diǎn)及應(yīng)用

7、These chips were SRAM memory chips often used to get new manufacturing processes debugged.
這些芯片SRAM存儲(chǔ)器通常用來(lái)獲取新的芯片制造工藝調(diào)試。

8、The Application of Serial SRAM Chip X24C45 in Automatic Punching Machine
串行SRAM-X24C45芯片在針板自動(dòng)沖床系統(tǒng)中的應(yīng)用

9、A 256 kb SRAM with Optimized Array Architecture
一種陣列布局優(yōu)化的256kb SRAM

10、This paper introduces the design technology of CMOS SRAM radiation harden circuit.
本文介紹了CMOSSRAM抗輻照加固電路的邏輯電路和版圖加固設(shè)計(jì)技術(shù)。

11、PSPICE aided design of SRAM 6T storage cell
SRAM 6T存儲(chǔ)單元電路的PSPICE輔助設(shè)計(jì)

12、We apply both two methods in the design of SRAM decoder and achieve a satisfying result.
SRAM的譯碼使用這兩種技術(shù)，取得了很好的效果。

13、A two-port SRAM memory cell includes a pair of cross-coupled inverters coupled to storage nodes.
一種二端口SRAM存儲(chǔ)器單元(20)包括耦合到存儲(chǔ)節(jié)點(diǎn)的一對(duì)交叉耦合的反相器(40)。

SRAM翻譯

【計(jì)】 靜態(tài)存取存儲(chǔ)器 詳情